2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SD1249, 2SD1249a features high collector-base voltage (emitter open) v cbo absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage 2SD1249 350 v (emitter open) 2SD1249a 400 v collector-emitter voltage 2SD1249 250 v (base open) 2SD1249a 300 v emitter-base voltage (collector open) v ebo 5v collector current i c 0.75 a peak collector current i cp 1.5 a collector power dissipation 35 ta = 25 1.3 junction temperature t j 150 storage temperature t stg -55to+150 v cbo v ceo p c w product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter voltage 2SD1249 250 v (base open) 2SD1249a 300 v collector-emitter cutoff 2SD1249 v ce =350v,v be =0 1 ma current (e-b short) 2SD1249a v ce =400v,v be =0 1 ma collector-emitter cutoff 2SD1249 v ce =150v,i b =0 1 ma current (base open) 2SD1249a v ce =200v,i b =0 1 ma emitter-base cutoff current (collector open) i ebo v eb =5v,i c =0 1 ma v ce =10v,i c =0.3a 40 250 v ce =10v,i c =1a 10 base-emitter voltage v be v ce =10v,i c =1a 1.5 v collector-emitter saturation voltage v ce(sat) i c =1a,i b = 0.2 a 1.0 v transition frequency f t v ce =10v,i c =0.2a,f=10mhz 30 mhz turn-on time t on i c =1a 0.5 s strage time t stg i b1 =0.1a,i b2 =?0.1a 2.0 s fall time t f v cc =50v 0.5 s i c =30ma,i b =0 v ceo i ces i ceo forward current transfer ratio h fe h fe classification rank r q p hfe 40 to 90 70 to 150 120 to 250 2SD1249, 2SD1249a product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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